Investigation of character and spatial distribution of threading edge dislocations in 4H-SiC epilayers by high-resolution topography

Journal of Crystal Growth

Volumn 311, Issue 5, 2009, Pages 1416-1422

  Kamata, I ^a   Nagano, M ^a   Tsuchida, H ^a   Chen, Yi ^b   Dudley, M ^b  

^a CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY   (Japan)

^b Stony Brook University   (United States)

Author keywords

A1. Characterization; A1. Line defects; A1. X ray topography; A3. Vapor phase epitaxy; B1. Silicon carbide; B2. Semiconducting materials

Indexed keywords

CRYSTAL GROWTH; ENGINEERING GEOLOGY; EPILAYERS; SILICON CARBIDE; SILICON WAFERS; SIZE DISTRIBUTION; VAPOR PHASE EPITAXY; VAPORS;

A1. CHARACTERIZATION; A1. LINE DEFECTS; A1. X-RAY TOPOGRAPHY; A3. VAPOR PHASE EPITAXY; B1. SILICON CARBIDE; B2. SEMICONDUCTING MATERIALS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 61349114958     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.11.017     Document Type: Article

References (8)

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