Investigation of micropipe defect terminating during SiC crystal growth

Materials Science and Technology

Volumn 27, Issue 2, 2011, Pages 586-588

  Lin, S H ^a   Chen, Z M ^a   Liang, P ^a   Jiang, D ^a   Xie, H J ^a   Yang, Y ^a   Pan, P ^a  

^a XI'AN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Micropipe; Scanning electron icroscope; SiC; Silicon droplet; X ray photoelectron spectroscopy

Indexed keywords

CRYSTAL GROWTH PROCESS; GROWTH INTERFACES; GROWTH PROCESS; MICROPIPE DEFECT; MICROPIPES; SCANNING ELECTRON ICROSCOPE; SCANNING ELECTRON MICROSCOPE; SECOND PHASE INCLUSIONS; SIC; SIC GROWTH; SIMPLE METHOD;

CRYSTAL GROWTH; CRYSTAL IMPURITIES; CRYSTALLIZATION; DEFECTS; DROP FORMATION; ELECTRONS; OPTICAL MICROSCOPY; PHOTOELECTRICITY; PHOTONS; POTASSIUM HYDROXIDE; SCANNING; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; SINGLE CRYSTALS; X RAYS;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 79551610260     PISSN: 02670836     EISSN: 17432847     Source Type: Journal    
DOI: 10.1179/026708309X12506933873468     Document Type: Article

References (9)

1. M. Tairov and V. F. Tsvetkov: J. Cryst. Growth, 1978, 43, 209.
2. S. Wang and J. He: Mater. Sci. Eng. B, 2001, B83, 8.
3. A. R. Powell, R. T. Leonard, M. F. Brady, St. G. Muller, V. F. Tsvetkov, R. Trussell, J. J. Sumakeris, H. McD. Mobgood, A. A. Burk, R. C. Glass and C. H. Carter, Jr: Mater. Sci. Forum, 2004, 457-460, 41.
4. M. Katsuno, N. Ohtani, T. Aigo, T. Fujumoto, H. Tsuge, H. Yashiro and M. Kanaya: J. Cryst. Growth, 2000, 216, 256.
5. S. Ha, N. T. Nuhfer, G. S. Rohrer, M. de Graef and M. Skowronski: J. Cryst. Growth, 2000, 220, 308.
6. P. Wu, M. Yoganathan and I. Zwieback: J. Cryst. Growth, 2008, 310, 1804-1809.
7. D. Hofmann, E. Schmitt and M. Bickermann: Mater. Sci. Eng. B, 1999, B61-62, 48-53.
8. D. Hofmann, M. Bickermann and R. Eckstein: J. Cryst. Growth, 1999, 198/199, 1005-1010.
9. M. Tuominen, R. Yakimova, A. Vehanen and E. Janzen: Mater. Sci. Eng. B, 1999, B57, 228-233.