Nucleation mechanism of dislocation half-loop arrays in 4H -silicon carbide homoepitaxial layers

Applied Physics Letters

Volumn 94, Issue 12, 2009, Pages

  Zhang, N ^a   Chen, Y ^a   Zhang, Y ^a   Dudley, M ^a   Stahlbush, R E ^b  

^a Stony Brook University   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH;

4H-SILICON CARBIDES; BASAL PLANE DISLOCATIONS; FORMATION MECHANISMS; HALF-LOOPS; HOMOEPITAXIAL GROWTHS; HOMOEPITAXIAL LAYERS; LOOP ARRAYS; NUCLEATION MECHANISMS; THREADING EDGE DISLOCATIONS; UV EXCITATIONS;

SILICON CARBIDE;

EID: 63549106317     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3105944     Document Type: Article

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