-
1
-
-
3142743150
-
-
Taylor & Francis, New York p. 121-65
-
Feng Z.C., and Zhao J.H. Silicon carbide: materials, processing, and devices (2004), Taylor & Francis, New York p. 121-65
-
(2004)
Silicon carbide: materials, processing, and devices
-
-
Feng, Z.C.1
Zhao, J.H.2
-
2
-
-
29444433099
-
Silicon carbide and diamond for high temperature device applications
-
Magnus W., Milan F., Qamar W., and Boris S. Silicon carbide and diamond for high temperature device applications. Journal of Materials Science: Materials in Electronics 179 1 (2006) 1-25
-
(2006)
Journal of Materials Science: Materials in Electronics
, vol.179
, Issue.1
, pp. 1-25
-
-
Magnus, W.1
Milan, F.2
Qamar, W.3
Boris, S.4
-
4
-
-
0035526575
-
Computer simulations of diffraction effects due to stacking faults in β-SiC: II, experimental verification
-
Vijay V., Pujar James D., and Cawley. Computer simulations of diffraction effects due to stacking faults in β-SiC: II, experimental verification. Journal of the American Ceramic Society 84 11 (2001) 2645-2651
-
(2001)
Journal of the American Ceramic Society
, vol.84
, Issue.11
, pp. 2645-2651
-
-
Vijay, V.1
Pujar James, D.2
Cawley3
-
5
-
-
0000312403
-
Observation of 4H-SiC to 3C-SiC polytypic transformation during oxidation
-
Robert S.O., Ming X., Pirouz P., Sergey T., Gregg J., and Leonard J.B. Observation of 4H-SiC to 3C-SiC polytypic transformation during oxidation. Applied Physics Letters 79 (2001) 3056-3058
-
(2001)
Applied Physics Letters
, vol.79
, pp. 3056-3058
-
-
Robert, S.O.1
Ming, X.2
Pirouz, P.3
Sergey, T.4
Gregg, J.5
Leonard, J.B.6
-
6
-
-
0000876506
-
Detection of stacking faults in 6H-SiC by raman scattering
-
Nakashima S., and Nakatake Y. Detection of stacking faults in 6H-SiC by raman scattering. Applied Physics Letters 77 22-27 (2000) 3612-3614
-
(2000)
Applied Physics Letters
, vol.77
, Issue.22-27
, pp. 3612-3614
-
-
Nakashima, S.1
Nakatake, Y.2
-
7
-
-
0031190138
-
Raman investigation of SiC polytypes
-
Nakashima S., and Harima H. Raman investigation of SiC polytypes. Physica Status Solidi 162 39 (1997) 39-64
-
(1997)
Physica Status Solidi
, vol.162
, Issue.39
, pp. 39-64
-
-
Nakashima, S.1
Harima, H.2
-
8
-
-
36049058134
-
Infrared absorption in SiC polytypes
-
Lyle P. Infrared absorption in SiC polytypes. Physics Review 167 (1968) 809-813
-
(1968)
Physics Review
, vol.167
, pp. 809-813
-
-
Lyle, P.1
-
9
-
-
47049113122
-
Effect of growth gas flow rate on the defects density of SiC single crystal
-
Yang Y., Lin T., and Chen Zm. Effect of growth gas flow rate on the defects density of SiC single crystal. Journal of Semiconductors 29 5 (2008) 851-854
-
(2008)
Journal of Semiconductors
, vol.29
, Issue.5
, pp. 851-854
-
-
Yang, Y.1
Lin, T.2
Chen, Zm.3
|