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Volumn 12, Issue 3, 2009, Pages 113-117

Identification of SiC polytypes by etched Si-face morphology

Author keywords

Etching pit; Polytype; Raman; SiC

Indexed keywords

ETCHING PITS; POLYTYPE; POLYTYPES; RAMAN SPECTRA; SIC POLYTYPES; WET-ETCH;

EID: 73349120243     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2009.08.004     Document Type: Article
Times cited : (10)

References (10)
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    • Computer simulations of diffraction effects due to stacking faults in β-SiC: II, experimental verification
    • Vijay V., Pujar James D., and Cawley. Computer simulations of diffraction effects due to stacking faults in β-SiC: II, experimental verification. Journal of the American Ceramic Society 84 11 (2001) 2645-2651
    • (2001) Journal of the American Ceramic Society , vol.84 , Issue.11 , pp. 2645-2651
    • Vijay, V.1    Pujar James, D.2    Cawley3
  • 6
    • 0000876506 scopus 로고    scopus 로고
    • Detection of stacking faults in 6H-SiC by raman scattering
    • Nakashima S., and Nakatake Y. Detection of stacking faults in 6H-SiC by raman scattering. Applied Physics Letters 77 22-27 (2000) 3612-3614
    • (2000) Applied Physics Letters , vol.77 , Issue.22-27 , pp. 3612-3614
    • Nakashima, S.1    Nakatake, Y.2
  • 7
    • 0031190138 scopus 로고    scopus 로고
    • Raman investigation of SiC polytypes
    • Nakashima S., and Harima H. Raman investigation of SiC polytypes. Physica Status Solidi 162 39 (1997) 39-64
    • (1997) Physica Status Solidi , vol.162 , Issue.39 , pp. 39-64
    • Nakashima, S.1    Harima, H.2
  • 8
    • 36049058134 scopus 로고
    • Infrared absorption in SiC polytypes
    • Lyle P. Infrared absorption in SiC polytypes. Physics Review 167 (1968) 809-813
    • (1968) Physics Review , vol.167 , pp. 809-813
    • Lyle, P.1
  • 9
    • 47049113122 scopus 로고    scopus 로고
    • Effect of growth gas flow rate on the defects density of SiC single crystal
    • Yang Y., Lin T., and Chen Zm. Effect of growth gas flow rate on the defects density of SiC single crystal. Journal of Semiconductors 29 5 (2008) 851-854
    • (2008) Journal of Semiconductors , vol.29 , Issue.5 , pp. 851-854
    • Yang, Y.1    Lin, T.2    Chen, Zm.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.