Observation of 2in SiC wafer by SWBXT at SPring-8

Materials Science Forum

Volumn 389-393, Issue 1, 2002, Pages 411-414

  Sasaki, M ^a   Hirai, A ^a   Miyanagi, T ^a   Furusho, T ^a   Nishiguchi, T ^a   Shiomi, H ^b   Nishino, S ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

^b SiXON Ltd   (Japan)

Author keywords

Defects; Stress field; SWBXT

Indexed keywords

DEFECTS; DISLOCATIONS (CRYSTALS); GRAIN BOUNDARIES; SILICON CARBIDE; TOPOGRAPHY; X RAY ANALYSIS; EDGE DISLOCATIONS; STRESSES;

EDGE DISLOCATION; STRESS FIELDS; SUB-GRAIN BOUNDARIES; SWBXT; X-RAY TOPOGRAPHY; LARGE DEFECTS; SPRING-8; STRESS FIELD; SUBGRAIN BOUNDARIES; TRANSMISSION MODE;

SILICON WAFERS;

EID: 34247197643     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.389-393.411     Document Type: Article

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