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Physica Status Solidi (B) Basic Research

Volumn 249, Issue 3, 2012, Pages 511-515

Optical identification of silicon as a shallow donor in MOVPE grown homoepitaxial AlN

(8) Neuschl, Benjamin a Thonke, Klaus a Feneberg, Martin b Mita, Seiji c Xie, Jinqiao c Dalmau, Rafael c Collazo, Ramón d Sitar, Zlatko d

a UNIVERSITY OF ULM (Germany)

b OTTO VON GUERICKE UNIVERSITY (Germany)

c HexaTech Inc (United States)

d North Carolina State University (United States)

Author keywords

AlN; Donor; Exciton; Homoepitaxy; Photoluminescence; Silicon

Indexed keywords

EXCITONS; III-V SEMICONDUCTORS; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR QUANTUM WELLS; SILICON; TEMPERATURE; WIDE BAND GAP SEMICONDUCTORS;

ALUMINUM NITRIDE (ALN); DISLOCATION DENSITIES; DONOR; HOMO EPITAXIES; LOW TEMPERATURE PHOTOLUMINESCENCE; OPTICAL IDENTIFICATION; SECONDARY ION MASS SPECTROSCOPIES (SIMS); SILICON CONCENTRATION;

ALUMINUM NITRIDE;

EID: 84857436081 PISSN: 03701972 EISSN: 15213951 Source Type: Journal
DOI: 10.1002/pssb.201100381 Document Type: Article

Times cited : (39)

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