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Volumn 53, Issue 2, 2011, Pages

Quantitative interpretation of the excitonic splittings in aluminum nitride

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ANALYTICAL EXPRESSIONS; ANISOTROPY PARAMETERS; DIELECTRIC CONSTANTS; DIRECT BAND GAP; EIGENSTATES; EXCITON-BINDING ENERGY; EXCITONIC ENERGY; EXCITONIC TRANSITION; FITTING PROCEDURE; LONG-RANGE COULOMB INTERACTION; MASS ANISOTROPY; QUANTITATIVE INTERPRETATION; SPLITTINGS;

EID: 79551518226     PISSN: 12860042     EISSN: 12860050     Source Type: Journal    
DOI: 10.1051/epjap/2010100448     Document Type: Article
Times cited : (12)

References (28)
  • 7
  • 10
    • 79551550359 scopus 로고    scopus 로고
    • edited by J.I. Pankove, T.D. Moutsakas ( Academic Press, New York
    • B. Gil, in Stress effects on optical properties, Gallium nitride (GAN), Vol. II, edited by J.I. Pankove, T.D. Moutsakas (Academic Press, New York, 1999), pp. 209- 274
    • (1999) Stress Effects on Optical Properties, Gallium Nitride (GAN) , vol.2 , pp. 209-274
    • Gil, B.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.