Silicon in AlN: Shallow donor and DX behaviors

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 7-8, 2011, Pages 2167-2169

  Son, N T ^a   Bickermann, M ^b   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

DX properties; Electron paramagnetic resonance; Shallow donor

Indexed keywords

ALN; BULK SAMPLES; DX CENTERS; DX PROPERTIES; EPR SIGNALS; OPERATING TEMPERATURE; ROOM TEMPERATURE; SHALLOW DONORS; TEMPERATURE DEPENDENT;

DOPING (ADDITIVES); ELECTRON RESONANCE; ELECTRON SPIN RESONANCE SPECTROSCOPY; PARAMAGNETIC MATERIALS; PARAMAGNETISM; SILICON;

PARAMAGNETIC RESONANCE;

EID: 79960712874     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201001030     Document Type: Article

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