222 nm single-peaked deep-UV LED with thin AlGaN quantum well layers

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

  Norimichi, Noguchi ^a,b,c   Hirayama, Hideki ^a,b,c   Yatabe, Tohru ^a,b,c   Kamata, Norihiko ^b,c  

^a RIKEN   (Japan)

^b SAITAMA UNIVERSITY   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN QUANTUM WELLS; ALN BUFFER; DEEP-UV; EMISSION INTENSITY; EXTERNAL QUANTUM EFFICIENCY; HIGH QUALITY; MAXIMUM OUTPUT POWER; MULTILAYER GROWTH; MULTIQUANTUM WELLS; PULSED CURRENT INJECTION; QUANTUM WELL; SAPPHIRE SUBSTRATES;

LIGHT EMITTING DIODES; SAPPHIRE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79251610922     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880923     Document Type: Article

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