Silicon-doping induced strain of aln layers: A comparative luminescence and Raman study

Physica Status Solidi - Rapid Research Letters

Volumn 2, Issue 5, 2008, Pages 215-217

  Prinz, Günther M ^a   Feneberg, Martin ^a   Schirra, Martin ^a   Sauer, Rolf ^a   Thonke, Klaus ^a   Thapa, Sarad B ^a   Scholz, Ferdinand ^a  

^a UNIVERSITY OF ULM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALN LAYERS; ALUMINUM NITRIDE LAYER; INDUCED STRAIN; LOWER ENERGIES; RAMAN STUDIES; SI CONCENTRATION; VIBRATIONAL MODES; X-RAY DIFFRACTION DATA;

ALUMINUM NITRIDE; DOPING (ADDITIVES); LIGHT; LUMINESCENCE; NITRIDES; SEMICONDUCTING ALUMINUM COMPOUNDS; X RAY DIFFRACTION;

TENSILE STRAIN;

EID: 70349690958     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.200802155     Document Type: Article

References (8)

1. Y. Taniyasu, M. Kasu, and T. Makimoto, Nature 441, 325 (2006).
2. K. B. Nam, M. L. Nakarmi, J. Li, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 83, 2787 (2003).
3. G. M. Prinz, A. Ladenburger, M. Schirra, M. Feneberg, K. Thonke, R. Sauer, Y. Taniyasu, M. Kasu, and T. Makimoto, J. Appl. Phys. 101, 023511 (2007).
4. S. B. Thapa, J. Hertkorn, F. Scholz, G. M. Prinz, M. Feneberg, M. Schirra, K. Thonke, R. Sauer, J. Biskupek, and U. Kaiser, phys. stat. sol. (c) 5, 1774 (2008).
5. M. Hermann, F. Furtmayr, A. Bergmaier, G. Dollinger, M. Stutzmann, and M. Eickhoff, Appl. Phys. Lett. 86, 192108 (2005).
6. J.-M. Wagner and F. Bechstedt, Phys. Rev. B 66, 115202 (2002).
7. A. Sarua, M. Kuball, and J. E. Van Nostrand, Appl. Phys. Lett. 81, 1426 (2002).
8. B. N. Pantha, N. Nepal, T. M. Al Tahtamouni, M. L. Nakarmi, J. Li, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 91, 121117 (2007).