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Volumn 208, Issue 7, 2011, Pages 1520-1522

Sharp bound and free exciton lines from homoepitaxial AlN

Author keywords

aluminum nitride; donors; excitons; photoluminescence

Indexed keywords

ALN; ALN LAYERS; BAND GAP ENERGY; BULK ALN; DONOR-BOUND EXCITON; DONORS; ENERGY REGIONS; EXCITON-BINDING ENERGY; FREE EXCITONS; HIGH RESOLUTION; HOMOEPITAXIAL; SHALLOW DONORS; SHARP BOUNDS;

EID: 79960088943     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201000947     Document Type: Article
Times cited : (29)

References (20)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.