Carrier tunneling in nanocrystalline silicon-silicon dioxide superlattices: A weak coupling model

Physical Review B - Condensed Matter and Materials Physics

Volumn 69, Issue 23, 2004, Pages

  Kamenev, B V ^a   Grom, G F ^b   Lockwood, D J ^c   McCafrey, J P ^c   Laikhtman, B ^d   Tsybeskov, L ^a  

^a NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^b Agere Systems   (United States)

^c NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^d HEBREW UNIVERSITY OF JERUSALEM   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON; SILICON DIOXIDE;

ARTICLE; CONDUCTANCE; ENERGY; OSCILLATION; SIMULATION; THEORETICAL MODEL;

EID: 42749103091     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.69.235306     Document Type: Article

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