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Volumn 97, Issue 1, 2005, Pages

Time-resolved and time-integrated photoluminescence analysis of state filling and quantum confinement of silicon quantum dots

(7) Van Dao, Lap a Wen, Xiaoming a Do, My Tra Thi a Hannaford, Peter a Cho, Eun Chel b Cho, Young H b Huang, Yidan b

a SWINBURNE UNIVERSITY OF TECHNOLOGY (Australia)

b UNIVERSITY OF NEW SOUTH WALES (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BAND (CB); QUANTUM CONFINEMENT; SILICON RICH OXIDE (SRO); VALENCE BAND (VB);

ANNEALING; CHARGE CARRIERS; ELECTRONIC DENSITY OF STATES; ENERGY GAP; HIGH RESOLUTION ELECTRON MICROSCOPY; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; PHOTOMULTIPLIERS; PRECIPITATION (CHEMICAL); QUANTUM THEORY; SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 19944431993 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1823027 Document Type: Article

Times cited : (39)

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