Visible light emitting Si/SiO2 superlattices

Solid-State Electronics

Volumn 40, Issue 1-8, 1996, Pages 197-201

  Lu, Z H ^a   Lockwood, D J ^a   Baribeau, J M ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; IMPURITIES; MOLECULAR BEAM EPITAXY; MULTILAYERS; PHOTOLUMINESCENCE; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON; SILICA; STRUCTURE (COMPOSITION); TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

AUGER SPUTTER PROFILE; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; PHOTOLUMINESCENCE MEASUREMENT; PHYSICAL STRUCTURE; QUANTUM CONFINEMENT; RATE LIMITED OXIDATION PROCESS; X RAY PHOTOELECTRON SPECTROSCOPY MEASUREMENT; X RAY SPECULAR REFLECTIVITY;

SEMICONDUCTOR SUPERLATTICES;

EID: 0029711820     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00245-6     Document Type: Article

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