Residual stress on surface and cross-section of porous silicon studied by micro-raman spectroscopy

Chinese Physics Letters

Volumn 22, Issue 4, 2005, Pages 984-986

  Lei, Zhen Kun ^a,b   Kang, Yi Lan ^b   Cen, Hao ^b   Hu, Ming ^b   Qiu, Yu ^b  

^a DALIAN UNIVERSITY OF TECHNOLOGY   (China)

^b TIANJIN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRESS; INTERFACES (MATERIALS); LATTICE MISMATCH; POROSITY; POROUS SILICON; STRESS ANALYSIS; SUBSTRATES; SURFACE STRESS;

MICRO RAMAN SPECTROSCOPY; POROUS SILICON LAYERS; RESIDUAL STRESS PROFILES; SI SUBSTRATES; STRESS DECREASE; TENSILE RESIDUAL STRESS;

RESIDUAL STRESSES;

EID: 24144459821     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/22/4/057     Document Type: Article

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