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Volumn , Issue , 2010, Pages 457-460

Realization OF InGaN solar cells on (111) silicon substrate

Author keywords

[No Author keywords available]

Indexed keywords

GAN/SAPPHIRE; HIGH-EFFICIENCY SOLAR CELLS; III-NITRIDE; MOCVD; PHOTORESPONSES; QUANTUM WELL SOLAR CELLS; SAPPHIRE SUBSTRATES; SILICON SUBSTRATES;

EID: 78650139028     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2010.5616748     Document Type: Conference Paper
Times cited : (5)

References (15)
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    • (2000) Journal of Applied Physics , vol.88 , Issue.3 , pp. 1525-1534
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  • 2
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    • Optical absorption, Raman, and photoluminescence excitation spectroscopy of inhomogeneous InGaN films
    • November 30, 1998-December 4, Boston, MA, USA: Materials Research Society
    • Robins, L.H., et al. Optical absorption, Raman, and photoluminescence excitation spectroscopy of inhomogeneous InGaN films. in Proceedings of the 1998 MRS Fall Meeting - Symposium on 'GaN and Related Alloys', November 30, 1998 - December 4, 1998. 1999. Boston, MA, USA: Materials Research Society.
    • Proceedings of the 1998 MRS Fall Meeting - Symposium on 'GaN and Related Alloys
    • Robins, L.H.1
  • 5
    • 34848905285 scopus 로고    scopus 로고
    • Design and characterization of GaNlnGaN solar cells
    • Jani, O., et aI., Design and characterization of GaNlnGaN solar cells. Applied Physics Letters, 2007. 91 (13): p. 132117.
    • (2007) Applied Physics Letters , vol.91 , Issue.13 , pp. 132117
    • Jani, O.1
  • 6
    • 53749099094 scopus 로고    scopus 로고
    • High quantum efficiency InGaNlGaN solar cells with 2. 95 eV band gap
    • Neufeld, C.J., et aI., High quantum efficiency InGaNlGaN solar cells with 2. 95 eV band gap. Applied Physics Letters, 2008. 93 (14): p. 143502.
    • (2008) Applied Physics Letters , vol.93 , Issue.14 , pp. 143502
    • Neufeld, C.J.1
  • 7
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    • High-quality InGaNIGaN heterojunctions and their photo voltaic effects
    • Copyright 2009, The Institution of Engineering and Technology:, 3 pp
    • Xinhe, Z., et aI., High-quality InGaNIGaN heterojunctions and their photo voltaic effects. Applied Physics Letters, 2008. 93 (Copyright 2009, The Institution of Engineering and Technology): p. 261108 (3 pp.).
    • (2008) Applied Physics Letters , vol.93 , pp. 261108
    • Xinhe, Z.1
  • 8
    • 72949122558 scopus 로고    scopus 로고
    • Design and realization of wideband-gap (2.67 eV) InGaN p-n junction solar cell
    • Copyright 2010, The Institution of Engineering and Technology
    • Jampana, B.R., et aI., Design and realization of wideband- gap (2.67 eV) InGaN p-n junction solar cell. IEEE Electron Device Letters, 2010. 31 (Copyright 2010, The Institution of Engineering and Technology): p. 32-4.
    • (2010) IEEE Electron Device Letters , vol.31 , pp. 32-34
    • Jampana, B.R.1
  • 10
    • 0347874296 scopus 로고    scopus 로고
    • III-nitrides: Growth, characterization, and properties
    • Jain, S.C., et aI., III-nitrides: Growth, characterization, and properties. Journal of Applied Physics, 2000. 87 (3): p. 965-1006.
    • (2000) Journal of Applied Physics , vol.87 , Issue.3 , pp. 965-1006
    • Jain, S.C.1
  • 11
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    • Structural characterization of undoped and Si doped GaN on Si(111)
    • Warrendale, PA, USA
    • Molina, S.I., et, al. Structural characterization of undoped and Si doped GaN on Si(111). 1999. Warrendale, PA, USA: TMS - Miner. Metals & Mater. Soc.
    • (1999) TMS-Miner. Metals &Amp; Mater. Soc.
    • Molina, S.I.1
  • 12
    • 0032615080 scopus 로고    scopus 로고
    • The effect of Si doping on the defect structure of GaNIAINISi(111)
    • Molina, S.I., et aI., The effect of Si doping on the defect structure of GaNIAINISi(111). Applied Physics Letters, 1999. 74 (22): p. 3362-4.
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  • 13
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    • Feltin, E., et aI., Green InGaN light-emitting diodes grown on silicon (111) by metalorganic vapor phase epitaxy. Japanese Journal of Applied Physics, Part 2 (Letters), 2001. 40 (Copyright 2001, lEE): p. 738-40.
    • (2001) Japanese Journal of Applied Physics, Part 2 (Letters) , vol.40 , pp. 738-740
    • Feltin, E.1
  • 15
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    • X-ray diffraction of 111-nitrides
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    • Moram, M.A.1    Vickers, M.E.2


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