-
1
-
-
0001477456
-
Luminescence and absorption in InGaN epitaxial layers and the van Roosbroeck-Shockley relation
-
Schenk, H.P.D., M. Leroux, and P. De Mierry, Luminescence and absorption in InGaN epitaxial layers and the van Roosbroeck-Shockley relation. Journal of Applied Physics, 2000. 88 (3): p. 1525-34.
-
(2000)
Journal of Applied Physics
, vol.88
, Issue.3
, pp. 1525-1534
-
-
Schenk, H.P.D.1
Leroux, M.2
Mierry, P.D.3
-
2
-
-
78650135813
-
Optical absorption, Raman, and photoluminescence excitation spectroscopy of inhomogeneous InGaN films
-
November 30, 1998-December 4, Boston, MA, USA: Materials Research Society
-
Robins, L.H., et al. Optical absorption, Raman, and photoluminescence excitation spectroscopy of inhomogeneous InGaN films. in Proceedings of the 1998 MRS Fall Meeting - Symposium on 'GaN and Related Alloys', November 30, 1998 - December 4, 1998. 1999. Boston, MA, USA: Materials Research Society.
-
Proceedings of the 1998 MRS Fall Meeting - Symposium on 'GaN and Related Alloys
-
-
Robins, L.H.1
-
5
-
-
34848905285
-
Design and characterization of GaNlnGaN solar cells
-
Jani, O., et aI., Design and characterization of GaNlnGaN solar cells. Applied Physics Letters, 2007. 91 (13): p. 132117.
-
(2007)
Applied Physics Letters
, vol.91
, Issue.13
, pp. 132117
-
-
Jani, O.1
-
6
-
-
53749099094
-
High quantum efficiency InGaNlGaN solar cells with 2. 95 eV band gap
-
Neufeld, C.J., et aI., High quantum efficiency InGaNlGaN solar cells with 2. 95 eV band gap. Applied Physics Letters, 2008. 93 (14): p. 143502.
-
(2008)
Applied Physics Letters
, vol.93
, Issue.14
, pp. 143502
-
-
Neufeld, C.J.1
-
7
-
-
58149229131
-
High-quality InGaNIGaN heterojunctions and their photo voltaic effects
-
Copyright 2009, The Institution of Engineering and Technology:, 3 pp
-
Xinhe, Z., et aI., High-quality InGaNIGaN heterojunctions and their photo voltaic effects. Applied Physics Letters, 2008. 93 (Copyright 2009, The Institution of Engineering and Technology): p. 261108 (3 pp.).
-
(2008)
Applied Physics Letters
, vol.93
, pp. 261108
-
-
Xinhe, Z.1
-
8
-
-
72949122558
-
Design and realization of wideband-gap (2.67 eV) InGaN p-n junction solar cell
-
Copyright 2010, The Institution of Engineering and Technology
-
Jampana, B.R., et aI., Design and realization of wideband- gap (2.67 eV) InGaN p-n junction solar cell. IEEE Electron Device Letters, 2010. 31 (Copyright 2010, The Institution of Engineering and Technology): p. 32-4.
-
(2010)
IEEE Electron Device Letters
, vol.31
, pp. 32-34
-
-
Jampana, B.R.1
-
9
-
-
17644370007
-
Theoretical possibilities of InxGa1-xN tandem PV structures
-
Hamzaoui, H., A.S. Bouazzi, and B. Rezig, Theoretical possibilities of InxGa1-xN tandem PV structures. Solar Energy Materials and Solar Cells, 2005.87 (1-4): p. 595-603.
-
(2005)
Solar Energy Materials and Solar Cells
, vol.87
, Issue.1-4
, pp. 595-603
-
-
Hamzaoui, H.1
Bouazzi, A.S.2
Rezig, B.3
-
10
-
-
0347874296
-
III-nitrides: Growth, characterization, and properties
-
Jain, S.C., et aI., III-nitrides: Growth, characterization, and properties. Journal of Applied Physics, 2000. 87 (3): p. 965-1006.
-
(2000)
Journal of Applied Physics
, vol.87
, Issue.3
, pp. 965-1006
-
-
Jain, S.C.1
-
11
-
-
78650111787
-
Structural characterization of undoped and Si doped GaN on Si(111)
-
Warrendale, PA, USA
-
Molina, S.I., et, al. Structural characterization of undoped and Si doped GaN on Si(111). 1999. Warrendale, PA, USA: TMS - Miner. Metals & Mater. Soc.
-
(1999)
TMS-Miner. Metals &Amp; Mater. Soc.
-
-
Molina, S.I.1
-
12
-
-
0032615080
-
The effect of Si doping on the defect structure of GaNIAINISi(111)
-
Molina, S.I., et aI., The effect of Si doping on the defect structure of GaNIAINISi(111). Applied Physics Letters, 1999. 74 (22): p. 3362-4.
-
(1999)
Applied Physics Letters
, vol.74
, Issue.22
, pp. 3362-3364
-
-
Molina, S.I.1
-
13
-
-
0035878249
-
Green InGaN light-emitting diodes grown on silicon (111) by metalorganic vapor phase epitaxy
-
Copyright 2001, lEE
-
Feltin, E., et aI., Green InGaN light-emitting diodes grown on silicon (111) by metalorganic vapor phase epitaxy. Japanese Journal of Applied Physics, Part 2 (Letters), 2001. 40 (Copyright 2001, lEE): p. 738-40.
-
(2001)
Japanese Journal of Applied Physics, Part 2 (Letters)
, vol.40
, pp. 738-740
-
-
Feltin, E.1
-
15
-
-
64249101572
-
X-ray diffraction of 111-nitrides
-
Copyright 2009, The Institution of Engineering and Technology):, (40 pp.).
-
Moram, MA and M.E. Vickers, X-ray diffraction of 111- nitrides. Reports on Progress in Physics, 2009. 72 (Copyright 2009, The Institution of Engineering and Technology): p. 036502 (40 pp.).
-
(2009)
Reports on Progress in Physics
, vol.72
, pp. 036502
-
-
Moram, M.A.1
Vickers, M.E.2
|