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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 7-8, 2011, Pages 2466-2468

Photovoltaic action from InxGa1-xN p-n junctions with x > 0.2 grown on silicon

(6) Gherasoiu, Iulian a Reichertz, Lothar A a,b Yu, Kin Man b Ager, Joel W b Kao, Vincent M b Walukiewicz, Wladek a,b

a Rose Street Laboratories of Energy ^* (United States)

b LAWRENCE BERKELEY NATIONAL LABORATORY (United States)

Author keywords

Hybrid; InGaN; Semiconductors; Silicon substrate; Solar cell; Tandem; Thin film

Indexed keywords

HIGH SERIES RESISTANCES; HYBRID; INGAN; KEY FACTORS; LIMITING PERFORMANCE; MAGNESIUM CONCENTRATIONS; P-N JUNCTION; P-TYPE DOPING; PHOTORESPONSES; SI(111) SUBSTRATE; SILICON SUBSTRATE; SYSTEMATIC INVESTIGATIONS; TANDEM;

ELECTRONIC PROPERTIES; GALLIUM NITRIDE; MAGNESIUM; OPEN CIRCUIT VOLTAGE; PHOTOVOLTAIC EFFECTS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79960707557 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.201001169 Document Type: Article

Times cited : (12)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.