Computer simulation of the effect of phosphorous doping of the i-layer in a thin-film a-Si:H p-i-n solar cell

Solar Energy Materials and Solar Cells

Volumn 61, Issue 3, 2000, Pages 287-300

  Prentice, J S C ^a  

^a UNIVERSITY OF JOHANNESBURG   (South Africa)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; BORON; COMPUTER SIMULATION; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; PHOSPHORUS; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SHORT CIRCUIT CURRENTS; THIN FILM DEVICES;

AMORPHOUS HYDRATED SILICON; THIN FILM SOLAR CELLS;

SILICON SOLAR CELLS;

EID: 0033903683     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0927-0248(99)00116-6     Document Type: Article

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