Multiple functional UV devices based on III-nitride quantum wells for biological warfare agent detection

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7216, Issue , 2009, Pages

  Wang, Qin ^a   Savage, Susan ^a   Persson, Sirpa ^a   Noharet, Bertrand ^a   Junique, Stéphane ^a   Andersson, Jan Y ^a   Liuolia, Vytautas ^b   Marcinkevičius, Saulius ^b  

^a ACREO AB   (Sweden)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

III nitride quantum wells; UV photodiode and biological warfare agent detection

Indexed keywords

ACTIVE LAYERS; ALGAN; BARRIER HEIGHTS; CUT-OFF WAVELENGTHS; FABRICATED DEVICES; FORWARD BIAS; FUNCTIONAL DEVICES; HYBRID INTEGRATIONS; III-NITRIDE QUANTUM WELLS; INGAN/GAN; MULTIPLE QUANTUM-WELL STRUCTURES; OPERATION WAVELENGTHS; OPTICAL FILTERING; PHOTO-LUMINESCENCE MEASUREMENTS; PHOTO-RESPONSIVITY; PIEZO-ELECTRIC EFFECTS; QUANTUM-CONFINED STARK EFFECTS; REVERSE BIAS; SAPPHIRE SUBSTRATES; SENSING APPLICATIONS; SOLAR BLINDS; STOKES SHIFTS; SURFACE NORMALS; ULTRAVIOLET OPTOELECTRONIC DEVICES; UV LIGHT EMITTERS; UV PHOTODIODE AND BIOLOGICAL WARFARE AGENT DETECTION; WELL WIDTHS;

ABSORPTION; CHEMICAL WARFARE; CORUNDUM; ELECTROABSORPTION MODULATORS; EMISSION SPECTROSCOPY; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT; LIGHT ABSORPTION; LIGHT EMISSION; OPTOELECTRONIC DEVICES; PHOTODIODES; PIEZOELECTRICITY; SEMICONDUCTING GALLIUM; SPECTRUM ANALYSIS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 65349142480     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.808469     Document Type: Conference Paper

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