Improvement of light output power of InGaN/GaN light-emitting diode by lateral epitaxial overgrowth using pyramidal-shaped SiO2

Optics Express

Volumn 18, Issue 2, 2010, Pages 1462-1468

  Cho, Chu Young ^a   Lee, Jin Bock ^b   Lee, Sang Jun ^a   Han, Sang Heon ^b   Park, Tae Young ^a   Kim, Je Won ^b   Kim, Yong Chun ^b   Park, Seong Ju ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; EXTRACTION; GALLIUM NITRIDE; LIGHT EMISSION; ORBITS; SILICON COMPOUNDS;

BLUE LIGHT-EMITTING; INGAN/GAN; INJECTION CURRENTS; INTERNAL QUANTUM EFFICIENCY; LATERAL EPITAXIAL OVERGROWTH; LIGHT OUTPUT POWER; LIGHT-EXTRACTION EFFICIENCY; THREADING DISLOCATION;

LIGHT EMITTING DIODES;

GALLIUM; GALLIUM NITRIDE; INDIUM; SILICON DIOXIDE;

ARTICLE; CHEMISTRY; CRYSTALLIZATION; ENERGY TRANSFER; EQUIPMENT; EQUIPMENT DESIGN; ILLUMINATION; INSTRUMENTATION; METHODOLOGY; SEMICONDUCTOR;

CRYSTALLIZATION; ENERGY TRANSFER; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GALLIUM; INDIUM; LIGHTING; SEMICONDUCTORS; SILICON DIOXIDE;

EID: 75249088297     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.18.001462     Document Type: Article

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