Dependence of the property of InGaN p-i-n solar cells on the light concentration and temperature

IEEE Transactions on Electron Devices

Volumn 58, Issue 11, 2011, Pages 3905-3911

  Cai, Xiao Mei ^a   Zeng, Sheng Wei ^a   Li, Xin ^a   Zhang, Jiang Yong ^a   Lin, Shuo ^a   Ling, An Kai ^a   Chen, Ming ^a   Liu, Wen Jie ^a   Wu, Shao Xiong ^a   Zhang, Bao Ping ^a  

^a XIAMEN UNIVERSITY   (China)

Author keywords

Illumination dependence; InGaN; reliability; solar cell; temperature dependence

Indexed keywords

BAND GAPS; CRYSTALLINE QUALITY; DEVICE CHARACTERISTICS; EXTERNAL QUANTUM EFFICIENCY; FILL FACTOR; HOMOJUNCTION; IDEALITY FACTORS; ILLUMINATION DEPENDENCE; INGAN; INTRINSIC MECHANISMS; LIGHT CONCENTRATION; RED SHIFT; RELATIVE EFFICIENCY; REVERSE-SATURATION CURRENTS; TEMPERATURE COEFFICIENT; TEMPERATURE DEPENDENCE;

GALLIUM NITRIDE; OPEN CIRCUIT VOLTAGE; TEMPERATURE DISTRIBUTION;

QUANTUM EFFICIENCY;

EID: 80054907223     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2166118     Document Type: Article

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