Valence-band discontinuities between InGaN and GaN evaluated by capacitance-voltage characteristics of p-InGaN/n-GaN diodes

Journal of Electronic Materials

Volumn 31, Issue 4, 2002, Pages 313-315

  Makimoto, Toshiki ^a   Kumakura, Kazuhide ^a   Nishida, Toshio ^a   Kobayashi, Naoki ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

Band offset; Capacitance voltage characteristics; GaN; Heterojunction diode; InGaN; P InGaN; Valence band discontinuity

Indexed keywords

CAPACITANCE; ELECTRIC POTENTIAL; GALLIUM NITRIDE; HETEROJUNCTIONS; PHOTOLUMINESCENCE; PIEZOELECTRICITY; SEMICONDUCTOR DIODES;

VALENCE-BANDS;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0036539756     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-002-0149-9     Document Type: Article

References (12)