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Japanese Journal of Applied Physics

Volumn 50, Issue 7 PART 1, 2011, Pages

Optical properties of staggered ingan/ingan/gan quantum-Well structures with ga- and n-Faces

(4) Park, Seoung Hwan a Ahn, Doyeol b Park, Jongwoon c Lee, Yong Tak d

a Catholic University of Daegu (South Korea)

b University of Seoul (South Korea)

c Korea Institute of Industrial Technology (South Korea)

d Gwangju Institute of Science and Technology (GIST) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EFFECTIVE MASS; MATRIX ELEMENTS; MULTIBAND EFFECTIVE MASS THEORY; QUANTUM WELL; QUANTUM WELL STRUCTURES; TRANSITION WAVELENGTHS;

GALLIUM; LIGHT EMITTING DIODES; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS;

OPTICAL PROPERTIES;

EID: 79960687635 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.50.072101 Document Type: Article

Times cited : (27)

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