Effects of Ge content in SiGe channel on electrical characteristics of high-k gated MOS device

Solid-State Electronics

Volumn 53, Issue 8, 2009, Pages 888-891

  Fu, Chung Hao ^a   Chang Liao, Kuei Shu ^a   Tsai, Kuen Hong ^a   Wang, Tien Ko ^a   Lee, Yao Jen ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

Ge content; High k gate dielectric; SiGe

Indexed keywords

CAPPING LAYER; ELECTRICAL CHARACTERISTIC; GATE LEAKAGES; GE CONTENT; HIGH-K GATE DIELECTRIC; HIGH-K GATE DIELECTRICS; LOW-LEAKAGE CURRENT; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; MOBILITY ENHANCEMENT; RELIABILITY PROPERTIES; SI LAYER; SIGE; SIGE CHANNELS;

ATOMIC LAYER DEPOSITION; DIELECTRIC DEVICES; GATES (TRANSISTOR); GERMANIUM; MOS CAPACITORS; MOS DEVICES; MOSFET DEVICES; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON ALLOYS;

GATE DIELECTRICS;

EID: 67649205198     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.04.022     Document Type: Article

References (10)

1. Stathis JH, et al. IEDM, San Francisco, vol. 71; 1998. p. 167.
2. Bersuker G., Barnett J., Moumen N., Foran B., Young C.D., Lysaght P., et al. Jpn J Appl Phys 43 (2004) 7899-7902
3. Sze S.M., and Irvin J.C. Solid State Electron 11 (1968) 599
4. Wu Y.H., Wu J.R., and Wu M.L. Appl Phys Lett 91 (2007) [093503]
5. Copel M., Gribelyuk M., and Gusev E.J. Appl Phys Lett 76 (2000) 436-438
6. Nicolet M.A., and Liu W.S. Microelectron Eng 28 (1995) 185-191
7. Kilpatrick S.J., Jaccodine R.J., and Thomson P.E. J Appl Phys 81 (1997) 8018-8028
8. Yeo C.C., Cho B.J., Gao F., Lee S.J., Lee M.H., Yu C.Y., et al. IEEE Electron Dev Lett 26 (2005) 761-763
9. Hauser JR, Ahmed K. Characterization Metrology ULSI Technology; 1998. p. 230-5.
10. Schroder D.K. Semiconductor material and device characterization. 2nd ed. (1998), John Wiley & Sons, New York