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Microelectronic Engineering

Volumn 88, Issue 7, 2011, Pages 1309-1311

A low gate leakage current and small equivalent oxide thickness MOSFET with Ti/HfO2 high-k gate dielectric

(9) Fu, C H a Chang Liao, K S a Chang, Y A a Hsu, Y Y a Tzeng, T H a Wang, T K a Heh, D W b Gu, P Y c Tsai, M J c

a NATIONAL TSING HUA UNIVERSITY (Taiwan)

b NATIONAL NANO DEVICE LABORATORIES (Taiwan)

c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE (Taiwan)

Author keywords

EOT; Gate dielectric; HfO2; Higher k; Ti

Indexed keywords

ANNEALING EFFECTS; ELECTRICAL CHARACTERISTIC; EOT; EQUIVALENT OXIDE THICKNESS; GATE-LEAKAGE CURRENT; HFO2; HIGH-K DIELECTRIC; HIGH-K GATE DIELECTRICS; HIGHER-K; LEAKAGE DENSITY; MOS-FET; POST-METALLIZATION ANNEALING;

GATES (TRANSISTOR); HAFNIUM OXIDES; LEAKAGE CURRENTS;

GATE DIELECTRICS;

EID: 79958036154 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2011.03.073 Document Type: Conference Paper

Times cited : (21)

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