Mechanisms limiting EOT scaling and gate leakage currents of high-k/ Metal gate stacks directly on SiGe

IEEE Electron Device Letters

Volumn 30, Issue 3, 2009, Pages 285-287

  Huang, Jeff ^a   Kirsch, Paul D ^a   Oh, Jungwoo ^a   Lee, Se Hoon ^a   Majhi, Prashant ^a   Harris, H Rusty ^b   Gilmer, Daivd C ^a   Bersuker, Gennadi ^a   Heh, Dawei ^a   Park, Chang Seo ^a   Park, Chanro ^a   Tseng, Hsing Huang ^a   Jammy, Raj ^a  

^a SEMATECH   (United States)

^b TEXAS A AND M UNIVERSITY   (United States)

Author keywords

Equivalent oxide thickness (EOT); HfSiON; High k; SiGe

Indexed keywords

DIFFUSION; GATE DIELECTRICS; GERMANIUM; HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; LOGIC GATES; MOS CAPACITORS; SILICON; SILICON ALLOYS; SILICON COMPOUNDS;

EQUIVALENT OXIDE THICKNESS (EOT); GATE STACKS; GATE-LEAKAGE CURRENTS; GE DIFFUSIONS; HFSION; HFSION DIELECTRICS; HIGH-K; INTERFACE LAYERS; INTERFACIAL LAYERS; METAL GATE STACKS; PLASMA NITRIDATION; SECONDARY MECHANISMS; SI OXIDATIONS; SI SUBSTRATES; SIGE; SURFACE CHANNELS;

SEMICONDUCTING GERMANIUM COMPOUNDS;

EID: 62549137369     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2011754     Document Type: Article

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