Controlled threshold voltage of high-mobility Ge pMOSFETs with high-k/metal gate on epitaxial Ge films on Si substrates

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 2008, Pages 40-41

  Oh, Jungwoo ^a   Majhi, Prashant ^a   Lee, Hideok ^b,c   Yoo, Ooksang ^b,c   Lee, Sehoon ^b   Banerjee, Sanjay ^b   Tseng, Hsing Huang ^a   Jammy, Raj ^a  

^a SEMATECH   (United States)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^c Chungnam National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 49049116104     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VTSA.2008.4530789     Document Type: Conference Paper

References (3)

1. P.Zimmerman et al., IEDM, p.655, 2006.
2. O.Weber et al., IEDM, p.143, 2005.
3. K. Saraswat et al., IEDM, p.659, 2006.