Quantum confinement and electroluminescence in ultrathin silicon nanowires fabricated by a maskless etching technique

Nanotechnology

Volumn 23, Issue 7, 2012, Pages

  Irrera, A ^a   Artoni, P ^a,b   Iacona, F ^a   Pecora, E F ^a,b   Franzo G ^a   Galli, M ^c   Fazio, B ^a   Boninelli, S ^a   Priolo, F ^a,b  

^a CNR   (Italy)

^b UNIVERSITY OF CATANIA   (Italy)

^c UNIVERSITY OF PAVIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BLUE SHIFT; DENSE ARRAYS; DIRECT SYNTHESIS; ETCHING TECHNIQUE; LOW VOLTAGES; MASK LESS; METAL LAYER; METAL THIN FILM; NAKED-EYE; NANOMETER SIZE; NOVEL APPLICATIONS; PROTOTYPE DEVICES; QUANTUM CONFINEMENT EFFECTS; ROOM TEMPERATURE; ROOM TEMPERATURE LUMINESCENCE; SI NANOWIRE; SI TECHNOLOGY; ULTRA-THIN; ULTRATHIN SILICON; WET-ETCHING PROCESS;

ELECTROLUMINESCENCE; LIGHT; NANOWIRES; QUANTUM CONFINEMENT; WET ETCHING;

SILICON;

EID: 84856143969     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/7/075204     Document Type: Article

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