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Applied Physics A: Materials Science and Processing

Volumn 102, Issue 1, 2011, Pages 13-19

Nanoscale amorphization, bending and recrystallization in silicon nanowires

(6) Pecora, Emanuele F a,b,d Irrera, Alessia a Boninelli, Simona a Romano, Lucia a,b Spinella, Corrado c Priolo, Francesco a,b

a CNR (Italy)

b UNIVERSITY OF CATANIA (Italy)

c CNR IMM (Italy)

d CSFNSM (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE PHASE; ION IRRADIATION; KEY PARAMETERS; NANO SCALE; RANDOM NUCLEATION; RECRYSTALLIZATIONS; SILICON NANOWIRES; SOLID PHASE EPITAXY; THERMAL-ANNEALING;

NANOWIRES;

NANOSTRUCTURED MATERIALS;

EID: 79551683317 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-010-6040-2 Document Type: Article

Times cited : (37)

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