Comparison of vacancy and antisite defects in GaAs and InGaAs through hybrid functionals

Journal of Physics Condensed Matter

Volumn 24, Issue 4, 2012, Pages

  Komsa, Hannu Pekka ^a   Pasquarello, Alfredo ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ANTI-SITE DEFECT; FORMATION ENERGIES; GA-RICH CONDITIONS; GAAS; HYBRID DENSITY; HYBRID FUNCTIONALS; TRANSITION LEVEL;

GALLIUM ARSENIDE; POINT DEFECTS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM;

DEFECTS;

EID: 84855650673     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/24/4/045801     Document Type: Article

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