A theoretical study of the initial oxidation of the GaAs (001) -Β 2 (2×4) surface

Applied Physics Letters

Volumn 95, Issue 25, 2009, Pages

  Scarrozza, M ^a,b   Pourtois, G ^a   Houssa, M ^b   Caymax, M ^a   Stesmans, A ^b   Meuris, M ^a   Heyns, M M ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO MOLECULAR DYNAMICS SIMULATION; ATOMISTIC MECHANISM; BAND GAPS; ENERGY LEVEL; FERMI LEVEL PINNING; GAAS(001); INITIAL OXIDATION; STRUCTURAL DEFECT; THEORETICAL STUDY;

ELECTRONIC PROPERTIES; GALLIUM ALLOYS; GALLIUM ARSENIDE; MOLECULAR DYNAMICS; OXIDATION; SEMICONDUCTING GALLIUM;

DEFECTS;

EID: 73449084479     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3275737     Document Type: Article

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