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Volumn 17, Issue 8, 2009, Pages

Simple intrinsic defects in gallium arsenide

Author keywords

[No Author keywords available]

Indexed keywords

ACCURATE PREDICTION; BAND GAPS; BI-STABILITY; CELL SIZE; CHARGE DEFECTS; CHARGE STATE; DEFECT CHEMISTRY; DEFECT LEVELS; DENSITY FUNCTIONALS; ENERGY LEVEL; FIRST-PRINCIPLES CALCULATION; GAAS; GALLIUM ARSENIDE; GENERALIZED GRADIENT APPROXIMATIONS; INTRINSIC DEFECTS; LOCAL DENSITY; MODEL CONSTRUCTION; NEGATIVE-U; PSEUDOPOTENTIALS; SUPER CELL;

EID: 70949097939     PISSN: 09650393     EISSN: 1361651X     Source Type: Journal    
DOI: 10.1088/0965-0393/17/8/084007     Document Type: Article
Times cited : (57)

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