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Volumn 110, Issue 12, 2011, Pages

Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs

(8) Paul, Abhijeet a Tettamanzi, Giuseppe C b,d Lee, Sunhee a Mehrotra, Saumitra R a Collaert, Nadine c Biesemans, Serge c Rogge, Sven b,d Klimeck, Gerhard a

a PURDUE UNIVERSITY (United States)

b DELFT UNIVERSITY OF TECHNOLOGY (Netherlands)

c IMEC (Belgium)

d Griffith University (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE CHANNELS; BARRIER HEIGHTS; CALCULATED VALUES; CHANNEL CONDUCTANCE; ELECTRON TRANSPORT; FINFETS; GATE BIAS; GATE COUPLING; IN-SITU; INTERFACE TRAP DENSITY; INTERFACE TRAPS; MULTI-GATE FETS; SUBTHRESHOLD; THEORETICAL INVESTIGATIONS; THEORETICAL VALUES; THERMALLY ACTIVATED; TIGHT BINDING; VOLUME INVERSION;

ARTS COMPUTING; UNITS OF MEASUREMENT;

INTEGRATED CIRCUITS;

EID: 84855334364 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3660697 Document Type: Article

Times cited : (6)

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