Experimental analysis of surface roughness scattering in FinFET devices

2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010

Volumn , Issue , 2010, Pages 305-308

  Lee, Jae Woo ^a,b   Jang, Doyoung ^a,b   Mouis, Mireille ^a   Kim, Gyu Tae ^b   Chiarella, Thomas ^c   Hoffmann, Thomas ^c   Ghibaudo, Gérard ^b  

^a IMEP LAHC   (France)

^b Korea University   (South Korea)

^c IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

EFFECTIVE MOBILITIES; EXPERIMENTAL ANALYSIS; FINFET DEVICES; LOW TEMPERATURES; MOBILITY DEGRADATION; MOBILITY MEASUREMENTS; SECOND ORDERS; SEPARATION TECHNIQUES; SURFACE ROUGHNESS SCATTERING;

GATES (TRANSISTOR); INTEGRATED CIRCUITS; METAL ANALYSIS; SCATTERING; SOLID STATE DEVICES; SURFACE PROPERTIES; WALLS (STRUCTURAL PARTITIONS);

SURFACE ROUGHNESS;

EID: 78649937356     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2010.5618353     Document Type: Conference Paper

References (13)

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