On momentum conservation and thermionic emission cooling

Journal of Applied Physics

Volumn 107, Issue 5, 2010, Pages

  Kim, Raseong ^a   Jeong, Changwook ^a   Lundstrom, Mark S ^a  

^a Purdue University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; CONDUCTING CHANNELS; COOLING DEVICES; EFFECTIVE MASS; EMISSION CURRENT; LATERAL MOMENTUM; MOMENTUM CONSERVATIONS; UPPER LIMITS;

HETEROJUNCTIONS; THERMIONIC EMISSION;

MOMENTUM;

EID: 77949740392     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3295899     Document Type: Article

References (38)

1. G. D. Mahan, J. Appl. Phys. 76, 4362 (1994).
2. G. D. Mahan, J. O. Sofo, and M. Bartkowiak, J. Appl. Phys. 83, 4683 (1998).
3. G. D. Mahan and L. M. Woods, Phys. Rev. Lett. 80, 4016 (1998).
4. A. Shakouri, E. Y. Lee, D. L. Smith, V. Narayanamurti, and J. E. Bowers, Microscale Thermophys. Eng. 2, 37 (1998).
5. T. Zeng and G. Chen, Microscale Thermophys. Eng. 4, 39 (2000).
6. D. Vashaee and A. Shakouri, Phys. Rev. Lett. 92, 106103 (2004).
7. D. Vashaee and A. Shakouri, J. Appl. Phys. 95, 1233 (2004).
8. M. D. Ulrich, P. A. Barnes, and C. B. Vining, J. Appl. Phys. 90, 1625 (2001).
9. H. J. Goldsmid, Thermoelectric Refrigeration (Plenum, New York, 1964).
10. A. Shakouri, Proceedings of the 24th International Conference on Thermoelectrics (2005), pp. 507-512.
11. C. B. Vining and G. D. Mahan, J. Appl. Phys. 86, 6852 (1999).
12. T. E. Humphrey, M. F. O'Dwyer, C. Zhang, and R. A. Lewis, J. Appl. Phys. 98, 026108 (2005).
13. Z. Bian and A. Shakouri, Appl. Phys. Lett. 88, 012102 (2006).
14. Z. Bian and A. Shakouri, Nonequilibrium Carrier Dynamics in Semiconductors (Springer, Berlin, 2006), pp. 179-182.
15. S. Wang and N. Mingo, Phys. Rev. B 79, 115316 (2009).
16. A. Rahman, G. Jing, S. Datta, and M. S. Lundstrom, IEEE Trans. Electron Devices 50, 1853 (2003).
17. S. M. Sze and K. K. Ng, Physics of Semiconductor Devices, 3rd ed. (Wiley, New York, 2007).
18. S. Datta, Quantum Transport: Atom to Transistor (Cambridge University Press, New York, 2005).
19. Z. Ren, Ph.D. thesis, Purdue University, 2001.
20. J. S. Blakemore, Solid-State Electron. 25, 1067 (1982).
21. R. Kim and M. Lundstrom, Notes on Fermi-Dirac Integrals, 3rd ed., http://nanohub.org/resources/5475 (2008).
22. C. M. Wu and E. S. Yang, Solid-State Electron. 22, 241 (1979).
23. K. Yang, J. R. East, and G. I. Haddad, Solid-State Electron. 36, 321 (1993).
24. K. Horio and H. Yanai, IEEE Trans. Electron Devices 37, 1093 (1990).
25. R. Stratton, Phys. Rev. 125, 67 (1962).
26. C. R. Crowell, Solid-State Electron. 12, 55 (1969).
27. C. R. Crowell and V. L. Rideout, Solid-State Electron. 12, 89 (1969).
28. T. Low, S. Hong, J. Appenzeller, S. Datta, and M. S. Lundstrom, IEEE Trans. Electron Devices 56, 1292 (2009).
29. R. Kim, S. Datta, and M. S. Lundstrom, J. Appl. Phys. 105, 034506 (2009).
30. D. L. Smith, E. Y. Lee, and V. Narayanamurti, Phys. Rev. Lett. 80, 2433 (1998).
31. D. L. Smith, M. Kozhevnikov, E. Y. Lee, and V. Narayanamurti, Phys. Rev. B 61, 13914 (2000).
32. M. Kozhevnikov, V. Narayanamurti, C. Zheng, Y.-J. Chiu, and D. L. Smith, Phys. Rev. Lett. 82, 3677 (1999).
33. B. Moyzhes and V. Nemchinsky, Appl. Phys. Lett. 73, 1895 (1998).
34. H. A. Bethe, MIT Radiation Laboratory Report No. 43-12, 1942.
35. F. Berz, Solid-State Electron. 28, 1007 (1985).
36. M. V. Fischetti, L. Wang, B. Yu, C. Sachs, P. M. Asbeck, Y. Taur, and M. Rodwell, Proceedings of the Electron Devices Meeting (2007), pp. 109-112.
37. M. V. Fischetti, S. Jin, T.-w. Tang, P. Asbeck, Y. Taur, S. E. Laux, M. Rodwell, and N. Sano, J. Comput. Electron. 8, 60 (2009) 10.1007/s10825-009-0277- z
38. R. J. Radtke, H. Ehrenreich, and C. H. Grein, J. Appl. Phys. 86, 3195 (1999).