Interface trap density metrology of state-of-the-art undoped Si n-FinFETs

IEEE Electron Device Letters

Volumn 32, Issue 4, 2011, Pages 440-442

  Tettamanzi, Giuseppe Carlo ^a,b   Paul, Abhijeet ^c   Lee, Sunhee ^c   Mehrotra, Saumitra R ^c   Collaert, Nadine ^d   Biesemans, Serge ^d   Klimeck, Gerhard ^c   Rogge, Sven ^a,b  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b UNIVERSITY OF NEW SOUTH WALES   (Australia)

^c PURDUE UNIVERSITY   (United States)

^d IMEC   (Belgium)

Author keywords

FinFETs; interface traps; thermionic theory

Indexed keywords

DEVICE DEGRADATION; FINFETS; INDUSTRY NEEDS; INTERFACE STATE; INTERFACE TRAP DENSITY; INTERFACE TRAPS; MOS INTERFACE; THERMIONIC THEORY;

INTEGRATED CIRCUITS;

EID: 79953042999     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2106150     Document Type: Article

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