Torsional bridge setup for the characterization of integrated circuits and microsensors under mechanical shear stress

Review of Scientific Instruments

Volumn 82, Issue 12, 2011, Pages

  Herrmann, M ^a   Gieschke, P ^a   Ruther, P ^a   Paul, O ^a  

^a UNIVERSITY OF FREIBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL MODEL; ANALYTICAL RESULTS; BOND PAD; BOND WIRE; CLAMPING MECHANISM; COMPARATIVE MEASUREMENTS; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; COMPUTATIONAL RESULTS; ELECTRICAL CONNECTION; ELECTRICAL INTERCONNECTIONS; ELECTRO-MECHANICAL; FOUR-POINT BENDING; IN-PLANE SHEAR; LONGITUDINAL AXIS; MECHANICAL SHEAR; NORMAL STRESS; NUMERICAL COMPUTATIONS; PIEZO-RESISTIVE; REGION OF INTEREST; SILICON BEAMS; TORSIONAL MOMENT;

ELECTRIC CONNECTORS; MATHEMATICAL MODELS; MICROSENSORS;

SHEAR STRESS;

EID: 84855332738     PISSN: 00346748     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3665921     Document Type: Article

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