Simultaneous and independent measurement of stress and temperature using a single field-effect transistor structure

Journal of Microelectromechanical Systems

Volumn 16, Issue 5, 2007, Pages 1232-1242

  Doelle, Michael ^a,b   Held, Jochen ^a   Ruther, Paul ^a   Paul, Oliver ^a  

^a UNIVERSITY OF FREIBURG   (Germany)

^b Silicon Microstructures Inc   (United States)

Author keywords

Field effect transistor; Mechanical stress sensing; Regularization methods; Temperature sensing; VT extraction

Indexed keywords

HALL EFFECT; STRESS MEASUREMENT; TEMPERATURE MEASUREMENT; TEMPERATURE SENSORS; THRESHOLD VOLTAGE;

SHEAR PIEZORESISTANCE EFFECT; STRESS SENSITIVITIES; TIKHONOV'S REGULARIZATION METHOD;

MOSFET DEVICES;

EID: 35148882672     PISSN: 10577157     EISSN: None     Source Type: Journal    
DOI: 10.1109/JMEMS.2007.904334     Document Type: Article

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