Deposition of zinc oxide thin films using a surface reaction on platinum nanoparticles

Materials Research Society Symposium Proceedings

Volumn 1315, Issue , 2012, Pages 21-26

  Yasui, Kanji ^a   Miura, Hitoshi ^a   Nishiyama, Hiroshi ^a  

^a NAGAOKA UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE; BAND-EDGE EMISSION INTENSITY; BAND-EDGE EMISSIONS; CHEMICAL VAPOR DEPOSITION METHODS; DIMETHYLZINC; DONOR-BOUND EXCITON; EMISSION PEAKS; FREE-EXCITON EMISSIONS; GREEN LUMINESCENCE; PHOTOLUMINESCENCE SPECTRUM; PL SPECTRA; PLATINUM NANOPARTICLES; PT-CATALYZED; REACTION ZONES; RESIDUAL CARRIER CONCENTRATION; ROCKING CURVES; ROOM TEMPERATURE; SAPPHIRE SUBSTRATES; SUBSTRATE TEMPERATURE; ZINC OXIDE THIN FILMS; ZNO; ZNO FILMS;

CARRIER CONCENTRATION; CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; CONDUCTIVE FILMS; DEPOSITION; EXCITONS; FULL WIDTH AT HALF MAXIMUM; HALL MOBILITY; LASER RADIATION; METALLIC FILMS; NOZZLES; OXIDE FILMS; PLATINUM; SAPPHIRE; SUBSTRATES; X RAY DIFFRACTION; ZINC OXIDE;

SURFACE REACTIONS;

EID: 84455175106     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/opl.2011.719     Document Type: Conference Paper

References (22)

1. F. S. Hickernell, Proc. IEEE, 64, 631 (1976).
2. S. Pizzini, N. Butta, D. Narducci, and M. Palladino, J. Electrochem. Soc., 136, 1945 (1989).
3. I. S. Jeong, J. H. Kim, and S. Im, Appl. Phys. Lett., 83, 2946 (2003).
4. T. Minami, Semicond. Sci. Technol., 20, S35 (2005).
5. B. K. Meyer, H. Alves, D. M. Hofmann, W. Kriegseis, D. Forster, F. Bertram, J. Christein, A. Hoffmann, M. Straßburg, M. Dworzak, U. Haboeck, and A. V. Rodina, phys. stat. sol. (b), 241, 231 (2004).
6. A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, Nature Materials, 4, 42 (2005).
7. E. M. Kaidashev, M. Lorenz, H. von Wenckstern, A. Rahm, H. C. Semmelhack, K.-H. Han, G. Benndorf, C. Bundesmann, H. Hochmuth, and M. Grundmann, Appl. Phys. Lett., 82, 3901 (2003).
8. P. Fons, K. Iwata, S. Niki, A. Yamada, and K. Matsubara, J. Cryst. Growth, 201-202, 627 (1999).
9. K. Miyamoto, M Sano, H. Kato, and T. Yao, J. Cryst. Growth, 265, 34 (2004).
10. A. Ohtomo and A. Tsukazaki, Semicond. Sci. Technol., 20, S1 (2005).
11. C. K. Lau, S. K. Tiku, and K. M. Lakin, J. Electrochem. Soc., 127, 1843 (1980).
12. J. Dai, F. Jiang, Y. Pu, L. Wang, W. Fang, and F. Li, Appl. Phys. A, 89, 645 (2007).
13. S. F. Chichibu, T. Onuma, M. Kubota, and A. Uedome, J. Appl. Phys., 99, 093505 (2006).
14. K. Ogata, T. Kawanishi, K. Maejima, S. Sakurai, Sz. Fujita, and Sg. Fujita, J. Cryst. Growth, 237-239, 553 (2002).
15. Y. Chen, D. M. Bagnall, Z. Zhu, T. Sekiuchi, K. Park, K. Hiraga, T. Yao, S. Koyama, M. Y. Shen, and T. Goto, J. Cryst. Growth, 181, 165 (1997).
16. A. Tsukazaki, A. Ohtomo, M. Kawasaki, T. Makino, C. H. Chia, T. Segawa, and H. Koinuma, Appl. Phys. Lett., 84, 3858 (2004).
17. A. Ohtomo, H. Kimura, K. Saito, T. Makino, Y. Segawa, H. Koinuma, and M. Kawasaki, J. Cryst. Growth, 214/215, 284 (2000).
18. H. Tampo, A. Yamada, P. Fons, H. Shibata, K. Matsubara, K. Iwata, S. Niki, K. Nakahara, and H. Takasu, Appl. Phys. Lett., 84, 4412 (2004).
19. S. Heinze, A. Dadgar, F. Bertram, A. Krtschil, J. Bläsing, H. Witte, S. Tiefenau, T Hempel, A. Diez, J. Christen, and A. Krost, Proc. SPIE, 6474, 647406-1 (2007).
20. J. Dai, H. Su, L. Wang, Y. Pu, W. Fang, and F. Jiang, J. Cryst. Growth, 290, 426 (2006).
21. M. Sano, K. Miyamoto, H. Kato, and T. Yao, Jpn. J. Appl. Phys., 42, L1050 (2003).
22. K. Miyamoto, M Sano, H. Kato, and T. Yao, Jpn. J. Appl. Phys., 41, L1203 (2002).