Emission from the higher-order excitons in ZnO films grown by laser molecular-beam epitaxy

Applied Physics Letters

Volumn 84, Issue 19, 2004, Pages 3858-3860

  Tsukazaki, A ^a   Ohtomo, A ^a   Kawasaki, M ^a,d   Makino, T ^b   Chia, C H ^b,e   Segawa, Y ^b,e   Koinuma, H ^c,d  

^a TOHOKU UNIVERSITY   (Japan)

^b INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^c TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^d NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^e TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; ANNEALING; CRYSTAL LATTICES; EXCITONS; FILM GROWTH; LIGHT ABSORPTION; LOW TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; ZINC OXIDE;

EXCITED STATES; HIGH-ORDER EXCITONS; LASER MOLECULAR-BEAM EPITAXY;

THIN FILMS;

EID: 2942601692     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1748847     Document Type: Article

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