Solid-state microwave annealing of ion-implanted 4H-SiC

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 261, Issue 1-2 SPEC. ISS., 2007, Pages 616-619

  Sundaresan, Siddarth G ^a   Tian, Yong lai ^b   Ridgway, Mark C ^c   Mahadik, Nadeemullah A ^a   Qadri, Syed B ^d   Rao, Mulpuri V ^a  

^a Krasnow Institute for Advanced Study   (United States)

^b LT Technologies   (United States)

^c AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^d NAVAL RESEARCH LABORATORY   (United States)

Author keywords

Ion implantation; Microwave annealing; Sheet resistance; Silicon carbide; Surface roughness

Indexed keywords

FURNACE ANNEALING; LATTICE DAMAGE; MICROWAVE ANNEALING; SUBSTITUTIONAL LATTICE;

ANNEALING; ATOMIC FORCE MICROSCOPY; MICROWAVE DEVICES; SHEET RESISTANCE; SILICON CARBIDE; SURFACE ROUGHNESS;

ION IMPLANTATION;

EID: 34447279488     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2007.04.018     Document Type: Article

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