Novel method for fabrication of nanoscale single-electron transistors: Electron beam induced deposition of Pt and atomic layer deposition of tunnel barriers

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 29, Issue 6, 2011, Pages

  George, Hubert C ^a   Orlova, Tatyana A ^a   Orlov, Alexei O ^a   Snider, Gregory L ^a  

^a University of Notre Dame   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ATOMIC LAYER DEPOSITION; COULOMB BLOCKADE; ELECTRON BEAMS; ELECTRONS; NANOTECHNOLOGY; PLATINUM; TRANSIENTS;

3D STRUCTURE; CHARGE SENSING; COULOMB BLOCKADE OSCILLATION; ELECTRON BEAM-INDUCED DEPOSITION; NANO SCALE; NANOSCALE ISLANDS; NON-LINEARITY; PRECISE CONTROL; SINGLE ELECTRON; TUNNEL BARRIER;

SINGLE ELECTRON TRANSISTORS;

EID: 84255183915     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3640752     Document Type: Article

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