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Volumn 96, Issue 4, 2010, Pages

Application of negative differential conductance in Al/AlOx single-electron transistors for background charge characterization

Author keywords

[No Author keywords available]

Indexed keywords

CORRELATION BETWEEN EXPERIMENT AND THEORY; ELECTROSTATIC MODELS; METAL OXIDES; NEGATIVE DIFFERENTIAL CONDUCTANCE; NORMAL STATE; QUARTZ SUBSTRATE; ROOM TEMPERATURE; TRAP CHARGING;

EID: 75749084519     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3298557     Document Type: Article
Times cited : (13)

References (16)
  • 2
    • 11544342601 scopus 로고
    • PRLTAO 0031-9007,. 10.1103/PhysRevLett.74.984
    • D. Weinmann, W. Hausler, and B. Kramer, Phys. Rev. Lett. PRLTAO 0031-9007 74, 984 (1995). 10.1103/PhysRevLett.74.984
    • (1995) Phys. Rev. Lett. , vol.74 , pp. 984
    • Weinmann, D.1    Hausler, W.2    Kramer, B.3
  • 6
    • 33846298872 scopus 로고    scopus 로고
    • Individual charge traps in silicon nanowires: Measurements of location, spin and occupation number by Coulomb blockade spectroscopy
    • DOI 10.1140/epjb/e2006-00452-x
    • M. Hofheinz, X. Jehl, M. Sanquer, G. Molas, M. Vinet, and S. Deleonibus, Eur. Phys. J. B EPJBFY 1434-6028 54, 299 (2006). 10.1140/epjb/e2006-00452-x (Pubitemid 46122535)
    • (2006) European Physical Journal B , vol.54 , Issue.3 , pp. 299-307
    • Hofheinz, M.1    Jehl, X.2    Sanquer, M.3    Molas, G.4    Vinet, M.5    Deleonibus, S.6
  • 7
    • 21544444472 scopus 로고
    • APPLAB 0003-6951,. 10.1063/1.89690
    • G. J. Dolan, Appl. Phys. Lett. APPLAB 0003-6951 31, 337 (1977). 10.1063/1.89690
    • (1977) Appl. Phys. Lett. , vol.31 , pp. 337
    • Dolan, G.J.1
  • 9
    • 75749148351 scopus 로고    scopus 로고
    • note
    • Monte Carlo Simulation software (CASINO) shows that a 38 μm thick quartz substrate is thick enough to backscatter all electrons from a 75 kV incoming beam.
  • 11
    • 75749142252 scopus 로고    scopus 로고
    • note
    • "High resolution" in this context means a large (>100) number of data points per single Coulomb blockade oscillation. This allows us to resolve very sharp peaks associated with NDC.
  • 15
    • 75749105819 scopus 로고    scopus 로고
    • note
    • 2/Si substrates. The enhanced stability of these devices in turn makes it possible to obtain crisp Coulomb diamond patterns.
  • 16


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.