Effects of visible light illumination on the conductance of Al/Al O x single-electron transistors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 6, 2009, Pages 3158-3163

  George, Hubert C ^a   Orlov, Alexei O ^a   Joyce, Robin A ^a   Tang, Yong ^a   Snider, Gregory L ^a  

^a University of Notre Dame   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COULOMB BLOCKADE OSCILLATION; DEVICE GEOMETRIES; INSULATING SUBSTRATES; INSULATOR-SEMICONDUCTOR INTERFACE; LIGHT ILLUMINATION; LOW TEMPERATURES; MOBILE CARRIERS; NEAR INFRARED; SET OPERATION; SINGLE ELECTRON TRANSISTORS; VISIBLE LIGHT; WIDE BAND GAP;

COULOMB BLOCKADE; INSULATION; OXIDE MINERALS; QUARTZ; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; TRANSIENTS; TRANSISTORS;

SUBSTRATES;

EID: 72849126189     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3259956     Document Type: Conference Paper

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