Single-electron charging effects in Nb/Nb oxide-based single-electron transistors at room temperature

Applied Physics Letters

Volumn 72, Issue 15, 1998, Pages 1893-1895

  Shirakashi, Jun Ichi ^a   Matsumoto, Kazuhiko ^a   Miura, Naruhisa ^b   Konagai, Makoto ^b  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0008300403     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121218     Document Type: Article

References (18)

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