Logarithmic behavior of the conductivity of electron-beam deposited granular Pt C nanowires

Physical Review B - Condensed Matter and Materials Physics

Volumn 72, Issue 23, 2005, Pages

  Rotkina, L ^a,b   Oh, S ^a,c   Eckstein, J N ^a   Rotkin, S V ^b  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

^b LEHIGH UNIVERSITY   (United States)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 29744459849     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.72.233407     Document Type: Article

References (29)

1. G. J. Dolan and D. D. Osheroff, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.43.721 43, 721 (1979);
2. R. S. Markiewicz, and L. A. Harris, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.46.1149 46, 1149 (1981).
3. P. A. Lee and T. V. Ramakrishnan, Rev. Mod. Phys. RMPHAT 0034-6861 10.1103/RevModPhys.57.287 57, 287 (1985).
4. E. Abrahams, P. W. Anderson, D. C. Licciardello, and T. V. Ramakrishnan, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.42.673 42, 673 (1979).
5. K. B. Efetov and A. Tschersich, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.67.174205 67, 174205 (2003).
6. I. S. Beloborodov, K. B. Efetov, A. V. Lopatin, and V. M. Vinokur, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.91.246801 91, 246801 (2003).
7. R. W. Simon, B. J. Dalrymple, D. Van Vechten, W. W. Fuller, and S. A. Wolf, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.36.1962 36, 1962 (1987).
8. H. Fujimori, S. Mitani, S. Ohnuma, T. Ikeda, T. Shima, and T. Masumoto, Mater. Sci. Eng., A MSAPE3 0921-5093 181-182, 897 (1994).
9. A. Gerber, A. Milner, G. Deutscher, M. Karpovsky, and A. Gladkikh, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.78.4277 78, 4277 (1997).
10. K. Kinoshita, Carbon, Electrochemical and Physicochemical Properties (John Wiley & Son, Inc., New York, 1988).
11. K. A. Matveev, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.51.1743 51, 1743 (1995);
12. Y. V. Nazarov, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.82. 1245 82, 1245 (1999) and references therein.
13. L. Rotkina, J.-F. Lin, and J. P. Bird, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1629382 83, 4426 (2003).
14. S. Matsui and K. Mori, J. Vac. Sci. Technol. B JVTBD9 0734-211X 10.1116/1.583317 4, 299 (1986).
15. H. W. P. Koops, R. Weiel, and D. P. Kern, J. Vac. Sci. Technol. B JVTBD9 0734-211X 10.1116/1.584045 6, 477 (1988).
16. S. Matsui and T. Ichihashi, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.100089 53, 842 (1988).
17. H. W. P. Koops, A. Kaya, and M. Weber, J. Vac. Sci. Technol. B JVTBD9 0734-211X 10.1116/1.588008 13, 2400 (1995).
18. N. Silvis-Cividjian, C. W. Hagen, P. Kruit, M. A. J. v.d. Stam, and H. B. Groen, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1575506 82, 3514 (2003).
19. K. Mitsuishi, M. Shimojo, M. Han, and K. Furuya, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1611274 83, 2064 (2003).
20. L. Rotkina (unpublished).
21. W.-K. Chen, The VLSI Handbook (CRC Press, Boca Raton, FL, 1999).
22. A. F. Ioffe and A. P. Regel, Prog. Semicond. PSEMA9 0555-4268 4, 237 (1960);
23. N. F. Mott, Metal-Insulator Transitions (Taylor & Francis, London, 1990).
24. J.-F. Lin, J. P. Bird, L. Rotkina, and P. A. Bennett, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.1541940 82, 802 (2003).
25. S. V. Panyukov and A. D. Zaikin, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.67.3168 67, 3168 (1991).
26. X. Wang and H. Grabert, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.53.12621 53, 12621 (1996).
27. M. Bowman, A. Anaya, A. L. Korotkov, and D. Davidovic, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.69.205405 69, 205405 (2004).
28. L. H. Yu and D. Natelson, Phys. Rev. B PRBMDO 0163-1829 10.1103/PhysRevB.68.113407 68, 113407 (2003).
29. M. V. Feigel'man, A. S. Ioselevich, and M. A. Skvortsov, Phys. Rev. Lett. PRLTAO 0031-9007 10.1103/PhysRevLett.93.136403 93, 136403 (2004).