Growth of ScN epitaxial films by plasma-assisted molecular beam epitaxy

Journal of Crystal Growth

Volumn 311, Issue 7, 2009, Pages 2054-2057

  Hall, J L ^a   Moram, M A ^b   Sanchez, A ^b   Novikov, S V ^a   Kent, A J ^a   Foxon, C T ^a   Humphreys, C J ^b   Campion, R P ^b  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

A3. Molecular beam epitaxy; B1. Nitrides

Indexed keywords

CRYSTAL GROWTH; EPITAXIAL FILMS; EPITAXIAL GROWTH; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WIRES;

A3. MOLECULAR BEAM EPITAXY; AFM; B1. NITRIDES; GAAS; GAAS(1 0 0); GAN GROWTHS; LATTICE PARAMETERS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXIES; POLYTYPE;

GALLIUM ALLOYS;

EID: 63349108174     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.11.084     Document Type: Article

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