Growth of epitaxial thin films of scandium nitride on 100-oriented silicon

Journal of Crystal Growth

Volumn 310, Issue 11, 2008, Pages 2746-2750

  Moram, M A ^a   Novikov, S V ^b   Kent, A J ^b   Norenberg C ^c   Foxon, C T ^b   Humphreys, C J ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^c SWANSEA UNIVERSITY   (United Kingdom)

Author keywords

A3. Molecular beam epitaxy; B1. Nitrides; B2. Scandium nitride; B2. Semiconducting III V materials; B2. Semiconducting silicon

Indexed keywords

EPITAXIAL GROWTH; GRAIN SIZE AND SHAPE; MOLECULAR BEAM EPITAXY; SILICON COMPOUNDS; THIN FILMS;

SCANDIUM NITRIDE; SEMICONDUCTING III-V MATERIALS;

SCANDIUM COMPOUNDS;

EID: 43049156581     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.01.045     Document Type: Article

References (20)

1. C.T. Horovitz, et al. (Eds.), Scandium: Its Occurrence, vol. 165, Academic Press, London, New York, 1975.
2. M.A. Moram, Z.H. Barber, C.J. Humphreys, Thin Solid Films, submitted for publication.
3. Lambrecht W.R.L. Phys. Rev. B 62 (2000) 13538
4. Moram M.A., Joyce T.B., Chalker P.R., Barber Z.H., and Humphreys C.J. J. Appl. Phys. 100 (2006) 023514
5. Moustakas T.D., Molnar R.J., and Dismukes J.P. ECS Proc. 96-11 (1996) 110
6. Moram M.A., Zhang Y., Kappers M.J., Barber Z.H., and Humphreys C.J. Appl. Phys. Lett. 92 (2007) 152101
7. Kaplan R., Prokes S.M., Binari S.C., and Kelner G. Appl. Phys. Lett. 68 (1996) 3248
8. Gu Z., Edgar J.H., Pomeroy J., Kuball M., and Coffey D.W. J. Mater. Sci. 15 (2004) 555
9. Gu Z., Edgar J.H., Coffey D.W., Chaudhuri J., Nyakiti L., Lee R.G., and Wen J.G. J. Crystal Growth 293 (2006) 242
10. Moram M.A., Joyce T.B., Chalker P.R., Barber Z.H., and Humphreys C.J. Appl. Surf. Sci. 252 (2006) 8385
11. Moram M.A., Kappers M.J., Barber Z.H., and Humphreys C.J. J. Crystal Growth 298 (2007) 268
12. Nörenberg C., Moram M.A., and Dobson P.J. Surf. Sci. 600 (2006) 4126
13. Takeuchi N., and Cocoletzi G.H. Phys. Rev. B 76 (2007) 035333
14. Orton J.W., and Foxon C.T. Rep. Prog. Phys. 61 (1998) 1
15. Bai X.E., and Kordesch M.E. Appl. Surf. Sci. 175-176 (2001) 499
16. Dismukes J.P., Yim W.M., and Ban V.S. J. Crystal Growth 13-14 (1972) 365
17. Gall D., Petrov I., Madsen L.D., Sundgren J.-E., and Greene J.E. J. Vac. Sci. Technol. A 16 (1998) 2411
18. Al-Brithen H., and Smith A.R. Appl. Phys. Lett. 77 (2000) 2485
19. Moustakas T.D., Molnar R.J., and Dismukes J.P. ECS Proc. 96-11 (1996) 197
20. Smith A.R., Al-Brithen H.A.H., Ingram D.C., and Gall D. J. Appl. Phys. 90 (2001) 1809