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Volumn 108, Issue 3, 2010, Pages

Low temperature photoluminescence and cathodoluminescence studies of nonpolar GaN grown using epitaxial lateral overgrowth

(8) Haberlen M a Badcock, T J b Moram, M A a Hollander, J L a Kappers, M J a Dawson, P b Humphreys, C J a Oliver, R A a

a UNIVERSITY OF CAMBRIDGE (United Kingdom)

b UNIVERSITY OF MANCHESTER (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE GAN; ASYMMETRIC DIFFUSION; BLUE-SHIFTED; DONOR-ACCEPTOR PAIRS; EMISSION FEATURES; EMISSION INTENSITY; EMISSION SPECTRUMS; EPITAXIAL LATERAL OVERGROWTH; LOW TEMPERATURE PHOTOLUMINESCENCE; LOW TEMPERATURES; LUMINESCENCE BAND; MONOCHROMATIC CATHODOLUMINESCENCE; NEAR BAND EDGE; NON-POLAR; NON-POLAR GAN; ORDERS OF MAGNITUDE; PEAK ENERGY; STRAIN STATE;

CATHODOLUMINESCENCE; EMISSION SPECTROSCOPY; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; PHOTOLUMINESCENCE; POINT DEFECTS;

EPITAXIAL FILMS;

EID: 77955897947 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3460641 Document Type: Article

Times cited : (23)

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