Noise-analysis-based model of filamentary switching ReRAM with ZrO x}/HfOx Stacks

IEEE Electron Device Letters

Volumn 32, Issue 7, 2011, Pages 964-966

  Lee, Daeseok ^a   Lee, Joonmyoung ^a   Jo, Minseok ^a   Park, Jubong ^a   Siddik, Manzar ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Low frequency noise; resistive memory; resistive random access memory (ReRAM)

Indexed keywords

BI-LAYER; CURRENT FLOWING; DEVICE PARAMETERS; HIGH-RESISTANCE STATE; LARGE AREA DEVICES; LOW-FREQUENCY NOISE; MODEL-BASED OPC; NOISE ANALYSIS; RESISTANCE RANDOM ACCESS MEMORY; RESISTIVE MEMORY; RESISTIVE RANDOM ACCESS MEMORY; SWITCHING MECHANISM;

NONVOLATILE STORAGE; ZIRCONIUM ALLOYS;

RANDOM ACCESS STORAGE;

EID: 79959775641     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2148689     Document Type: Article

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